Semiconductor process for manufacturing semiconductor devices wi

Details Semiconductor process for manufacturing semiconductor devices wi Semiconductor process for manufacturing semiconductor devices wi

1994-01-05

1995-07-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437150, 437154, 437909, 148DIG10, H01L 21331

Patent

active

054361796

ABSTRACT:
A bipolar transistor is formed on a substrate of a first (P) conductivity type by: forming a collector region (20) of the second conductivity type (N) in the substrate; forming an adjust region (27) of the first (P) conductivity type in the collector region (20); forming a base region (36) of the first (P) conductivity type in the collector region (20), the base region (36) containing the adjust region (27); and forming an emitter region (11) of the second (N) conductivity type in the adjust region (27). The base region (36) is deeper than and more heavily doped than the adjust region (27). The adjust region (27) alters the doping profile of the base-collector junction on the collector (20) side of the junction to increase the breakdown voltage of the transistor.

REFERENCES:
patent: 4980304 (1990-12-01), Chin et al.
patent: 5208169 (1993-05-01), Shah et al.

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