Semiconductor process for forming channel layer with passivated

Details Semiconductor process for forming channel layer with passivated Semiconductor process for forming channel layer with passivated

1993-05-18

1995-10-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 40, 437101, 437909, 437968, H01L 2184

Patent

active

054551820

ABSTRACT:
A thin film transistor which includes a first insulating layer, a silicon channel layer formed on the first insulating layer, and a second insulating layer formed on the silicon channel layer, and a passivation layer formed on the first insulating layer and formed successive to and covering the side face of the channel layer between the first and second insulating layers.

REFERENCES:
patent: 4814292 (1989-03-01), Sasaki et al.
patent: 5047819 (1991-09-01), Tanaka et al.

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