Semiconductor process for forming bump electrodes with tapered s

Details Semiconductor process for forming bump electrodes with tapered s Semiconductor process for forming bump electrodes with tapered s

1995-05-19

1996-12-24

Fourson, George

Fishing, trapping, and vermin destroying

437229, H01L 21441

Patent

active

055873375

ABSTRACT:
A method of manufacturing bump electrodes with a larger top surface area than bottom surface area is disclosed. First, an organic layer is deposited. Then holes and grooves partially surrounding the holes are formed in the organic layer. Next, heat is applied to the organic film, causing the organic film to shrink. This causes the openings to expand at the top away from the grooves partially surrounding the holes. Metallic bumps are then deposited within the holes.

REFERENCES:
patent: 4388147 (1983-06-01), Engel
patent: 5049972 (1991-09-01), Uda et al.
patent: 5061985 (1991-10-01), Meguro et al.
patent: 5242864 (1993-09-01), Fassberg et al.
patent: 5266446 (1993-11-01), Chang et al.
patent: 5310625 (1994-05-01), Angelopoulos et al.
patent: 5468681 (1995-11-01), Pasch
patent: 5496770 (1996-03-01), Park

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