Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Including adhesive bonding step
Reexamination Certificate
2005-05-24
2005-05-24
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Including adhesive bonding step
C438S217000, C438S227000, C438S231000, C438S302000, C438S305000, C257S493000, C257S497000, C257S506000, C257S511000, C257S521000
Reexamination Certificate
active
06897095
ABSTRACT:
A semiconductor fabrication process includes forming first and second transistors over first and second well regions, respectively where the first transistor has a first gate dielectric and the second transistor has a second gate dielectric different from the first gate dielectric. The first transistor has a first gate electrode and the second transistor has a second gate electrode. The first and second gate electrodes are the same in composition. The first gate dielectric and the second gate dielectric may both include high-K dielectrics such as Hafnium oxide and Aluminum oxide. The first and second gate electrodes both include a gate electrode layer overlying the respective gate dielectrics. The gate electrode layer is preferably either TaSiN and TaC. The first and second gate electrodes may both include a conductive layer overlying the gate electrode layer. In one such embodiment, the conductive layer may include polysilicon and tungsten.
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Adetutu Olubunmi O.
Samavedam Srikanth B.
White Bruce E.
Freescale Semiconductor Inc.
Lally Joseph P.
Smith Matthew
Yevsikov Victor V
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