Semiconductor probe with high resolution resistive tip and...

Measuring and testing – Surface and cutting edge testing – Roughness

Reexamination Certificate

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C324S761010

Reexamination Certificate

active

11482690

ABSTRACT:
A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

REFERENCES:
patent: 5021364 (1991-06-01), Akamine et al.
patent: 2006/0060779 (2006-03-01), Park et al.
patent: 2006/0157440 (2006-07-01), Jung et al.
patent: 2006/0252172 (2006-11-01), Park et al.
patent: 10-2004-0088631 (2004-10-01), None

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