Semiconductor pressure transducer

Details Semiconductor pressure transducer Semiconductor pressure transducer

1976-06-03

1977-09-27

Ruehl, Charles A.

Measuring and testing

Gas analysis

Moisture content or vapor pressure

73 885SD, 338 4, G01L 906

Patent

active

040503135

ABSTRACT:
A semiconductor pressure transducer comprises a circular diaphragm formed of a single crystal semiconductor material, at least a first strain gauge element having a piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in parallel with a predetermined axis which extends transversely of the surface of the diaphragm, at least a second strain gauge element having the piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in the direction perpendicular to the axis, and means for securing the diaphragm at the outer peripheral portion thereof. The distance between the second strain gauge element and the center of the diaphragm is differed from the distance between the center of the first strain gauge element and the latter.

REFERENCES:
patent: 3071745 (1963-01-01), Stedman
patent: 3456226 (1969-07-01), Vick
patent: 3537319 (1970-11-01), Yerman
patent: 3641812 (1972-02-01), Vick
patent: 3772628 (1973-11-01), Underwood et al.
V. Vaganov et al. "Properties of Diffusion Strain-Gauge Resistances of Pressure Transducers with Silicon Diaphragms"-Measurement Techniques-Dec. 1973.

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