Semiconductor pressure transducer

Electrical resistors – Strain gauge type

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338 5, 338 36, 338 42, 73727, 73777, 73774, G01L 122

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active

046188444

ABSTRACT:
In a semiconductor pressure transducer in accordance with the present invention, an oxide film is formed on a semiconductor base having a strain gauge resistor element for the purpose of protecting the strain gauge resistor element. Over the oxide film, a conductive metal film is formed which does not overlap with the strain gauge resistor element through said oxide film.

REFERENCES:
patent: 3456226 (1969-07-01), Vick
patent: 3662312 (1972-05-01), Thorp et al.
patent: 3961358 (1976-06-01), Polinsky
patent: 4125820 (1978-11-01), Marshall
patent: 4151502 (1979-04-01), Kurihara et al.
patent: 4173900 (1979-11-01), Tanabe et al.
patent: 4317126 (1982-02-01), Gragg, Jr.
patent: 4364276 (1982-12-01), Shimazoe et al.

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