Semiconductor pressure sensor with slanted resistors

Details Semiconductor pressure sensor with slanted resistors Semiconductor pressure sensor with slanted resistors

1981-02-23

1983-08-23

Albritton, C. L.

Electrical resistors

Strain gauge type

Fluid- or gas pressure-actuated

338 2, G01L 122

Patent

active

044006810

ABSTRACT:
A diaphragm is formed in a silicon chip by etching a rectangular cavity in one side thereof and piezoresistive resistors are formed in the other surface of the chip to sense stress changes on the diaphragm due to pressure changes. At least one resistor is placed along the edge of the diaphragm where a sharp stress peak occurs. To avoid the problem of inaccurate placement of the resistor relative to the peak, the resistor is slanted with respect to the stress ridge at a small angle of 10.degree. to 20.degree.. This makes the resistor placement and cavity alignment much less critical thereby assuring greater uniformity of response from one sensor to another at the expense of signal size for a given pressure change on the device.

REFERENCES:
patent: 3213681 (1965-10-01), Pearson
patent: 3505874 (1970-04-01), Kato et al.
patent: 3968466 (1976-07-01), Nakamura et al.
patent: 4065970 (1978-01-01), Wilner

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