Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1995-09-05
1997-02-18
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257417, 257418, 257419, 7351432, 7351433, 7351434, 73DIG1, 73DIG4, H01L 2982
Patent
active
056043635
ABSTRACT:
A less expensive small semiconductor pressure sensor in which a pressure sensing element is not displaced by vibration and the like and wire bonding is highly reliably effected includes a pressure sensing element having a diaphragm and a glass base die bonded to a die pad in substantially the same plane as that of an outer lead with a bonding resin. Each of two sets of hanging leads is attached to one of two opposite sides of the die pad to fix the die pad to a package base. With this arrangement, the die pad is securely bonded to the package base to prevent breakage of a metal wire caused by vibration and the like so that a less expensive and smaller semiconductor pressure sensor can be provided.
REFERENCES:
patent: 4129042 (1978-12-01), Rosvold
patent: 5436491 (1995-07-01), Hase et al.
patent: 5459351 (1995-10-01), Bender
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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