Measuring and testing – Fluid pressure gauge – Diaphragm
Patent
1987-05-15
1989-06-20
Levy, Stewart J.
Measuring and testing
Fluid pressure gauge
Diaphragm
G01L 904
Patent
active
048400670
ABSTRACT:
A semiconductor pressure sensor having a cylindrical housing with an opening formed at its tip end which is exposed to a pressure atmosphere and a metal diaphragm for receiving pressure which is formed in a wall of the cylindrical housing defining the opening. A metal oxide layer is formed in a surface of the metal diaphragm by oxidizing the surface of the metal diaphragm, and a glass layer is formed on the metal oxide layer. A semiconductor chip, on which a strain gauge is formed, is firmly and surely bonded to the metal diaphragm through the glass layer by virtue of the metal oxide layer. This semiconductor pressure sensor can measure high pressure with sufficient sensitivity and high accuracy.
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Ando Yoshiyasu
Hattori Tadashi
Huzino Seizi
Mizuno Naohito
Nishida Minoru
Levy Stewart J.
Nippon Soken Inc.
Raevis Robert R.
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