Semiconductor pressure sensor with method diaphragm

Measuring and testing – Fluid pressure gauge – Diaphragm

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G01L 904

Patent

active

048400670

ABSTRACT:
A semiconductor pressure sensor having a cylindrical housing with an opening formed at its tip end which is exposed to a pressure atmosphere and a metal diaphragm for receiving pressure which is formed in a wall of the cylindrical housing defining the opening. A metal oxide layer is formed in a surface of the metal diaphragm by oxidizing the surface of the metal diaphragm, and a glass layer is formed on the metal oxide layer. A semiconductor chip, on which a strain gauge is formed, is firmly and surely bonded to the metal diaphragm through the glass layer by virtue of the metal oxide layer. This semiconductor pressure sensor can measure high pressure with sufficient sensitivity and high accuracy.

REFERENCES:
patent: 2784593 (1956-07-01), Peucker
patent: 3341796 (1967-09-01), Eisele
patent: 3858150 (1975-01-01), Gurtler et al.
patent: 4293325 (1981-10-01), Chirino et al.
patent: 4319397 (1982-03-01), Tanabe et al.
patent: 4382377 (1983-05-01), Kleinschmidt et al.
patent: 4481497 (1984-11-01), Kurtz et al.
patent: 4525766 (1985-06-01), Petersen
patent: 4527428 (1985-07-01), Shimada et al.
patent: 4628296 (1986-12-01), Kitagawa et al.
patent: 4633212 (1986-12-01), Johnson
patent: 4712082 (1987-12-01), Ito et al.

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