Semiconductor pressure sensor including reference capacitor on t

Details Semiconductor pressure sensor including reference capacitor on t Semiconductor pressure sensor including reference capacitor on t

1997-10-03

2000-04-18

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257248, 257249, 257254, 257417, 361280, 3612831, 3612832, 3612834, H01G 700

Patent

active

060518537

ABSTRACT:
A semiconductor pressure sensor utilizing electrostatic capacitance has a plurality of pressure sensing electrostatic capacitances and a reference electrostatic capacitance formed on one side of a silicon chip. As a movable electrode, the pressure sensing electrostatic capacitances each have a diaphragm, which may have a displacement portion composed of a central area thereof, and a peripheral portion which is more deformable than the central portion.

REFERENCES:
patent: 4743836 (1988-05-01), Grzybowski et al.
patent: 5431057 (1995-07-01), Zimmer et al.
patent: 5444901 (1995-08-01), Wiegand et al.

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