Semiconductor pressure sensor for use at high temperature and pr

Details Semiconductor pressure sensor for use at high temperature and pr Semiconductor pressure sensor for use at high temperature and pr

1993-01-12

1994-08-02

Chilcot, Jr., Richard E.

Measuring and testing

Fluid pressure gauge

Diaphragm

296211, 338 4, G01L 906, G01L 908

Patent

active

053335058

ABSTRACT:
In a semiconductor pressure sensor, a dam which prevents a sheathing resin from flowing into a diaphragm portion during the molding of the sheathing resin is disposed on the outer periphery of piezoresistors and the diaphragm portion on the surface of a semiconductor pressure sensor chip. The volume of the base and that of the semiconductor pressure sensor chip are adjusted so that a tensile force exerted upon the semiconductor pressure sensor chip by the base cancels a compressive force exerted upon the semiconductor pressure sensor by the sheathing resin when the temperature of the semiconductor pressure sensor returns to an ordinary room temperature from a high temperature. As a result, strain is not caused in the semiconductor pressure sensor chip, and therefore measurements of pressure with a high degree of accuracy can be performed.

REFERENCES:
patent: 4823605 (1989-04-01), Stein
patent: 5207102 (1993-05-01), Takahashi et al.
patent: 5209120 (1993-05-01), Araki

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