Electrical resistors – Strain gauge type – Fluid- or gas pressure-actuated
Patent
1994-03-18
1996-12-31
Walberg, Teresa J.
Electrical resistors
Strain gauge type
Fluid- or gas pressure-actuated
73862474, 338 42, G01L 122
Patent
active
055898106
ABSTRACT:
A semiconductor pressure sensor utilizes single-crystal silicon piezoresistive gage elements dielectrically isolated by silicon oxide from other such elements, and utilizes an etched silicon substrate. P-type implants form p-type piezoresistive gage elements and form p+ interconnections to connect the sensor to external electrical devices. The diaphragm is made from polysilicon and is deposited on top of the gage elements.
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European Search Report dated May 6, 1996 in European Patent Application No. 95103970.0.
The Foxboro Company
Valencia Raphael
Walberg Teresa J.
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