Semiconductor pressure sensor and process for fabricating...

Measuring and testing – Fluid pressure gauge – Electrical

Reexamination Certificate

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Details

C073S753000

Reexamination Certificate

active

10543493

ABSTRACT:
This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.

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patent: 6401542 (2002-06-01), Kato
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patent: H11-204678 (1999-07-01), None
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patent: 2000-58695 (2000-02-01), None
patent: 2000-174078 (2000-06-01), None
patent: WO 00/77844 (2000-12-01), None

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