Semiconductor pressure sensor and fabrication method thereof

Details Semiconductor pressure sensor and fabrication method thereof Semiconductor pressure sensor and fabrication method thereof

2011-08-02

2011-08-02

Kirkland, III, Freddie (Department: 2855)

Measuring and testing

Fluid pressure gauge

Diaphragm

C073S753000, C073S754000

Reexamination Certificate

active

07987727

ABSTRACT:
A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.

REFERENCES:
patent: 7270012 (2007-09-01), Yokoyama et al.
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patent: 7451656 (2008-11-01), Yokoyama et al.
patent: 7530276 (2009-05-01), Sato et al.
patent: 7540198 (2009-06-01), Ichikawa
patent: 7624644 (2009-12-01), Fujioka
patent: 2009/0266170 (2009-10-01), Murashige et al.
patent: 06-140640 (1994-05-01), None

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