Semiconductor pressure sensor

Details Semiconductor pressure sensor Semiconductor pressure sensor

1990-02-14

1992-01-14

Lateef, Marvin M.

Electrical resistors

Strain gauge type

338 5, 7386207, G01L 122

Patent

active

050814370

ABSTRACT:
The pressure sensor is formed of semiconductor material which is formed on insulating support, i.e., as a semiconductor-on-silicon. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs joined by a base, such that they are U-shaped, and two others are I-shaped. Each of the four gauges comprise two half-gauges, and each half-gauge comprises an elongated sensing zone in semiconductor material and having a reduced width in the plane of the insulating support. Two ohmic contact zones are disposed at the ends of each of the half-gauges, and two connection zones in semiconductor material and of greater width are disposed between the sensing zones and the ohmic contact zones, the form of the two connection zones are the same for each of the eight half-gauges.

REFERENCES:
patent: 3368179 (1968-02-01), Elliott
patent: 3886799 (1975-06-01), Billette et al.
patent: 4003127 (1977-01-01), Jaffe et al.
patent: 4628296 (1986-12-01), Kitagawa et al.
patent: 4633283 (1986-12-01), Avery
Sensors & Actuators, vol. 13, No. 1, Jan. 1988, pp. 71-77, Lausanne, CH; Y. Onuma et al; "Piezoresistive elements of polycrystalline semiconductor thin films".
Transducers '85, International Conference of Solid-State Sensors and Actuators, Digest of Technical Papers 1985, pp. 430-433, IEEE, New York, U.S.

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