Semiconductor pressure sensor

Details Semiconductor pressure sensor Semiconductor pressure sensor

1987-07-31

1989-03-21

Woodiel, Donald O.

Measuring and testing

Fluid pressure gauge

With pressure and/or temperature compensation

73727, 73766, 338 4, G01B 716, G01L 708, G01L 908

Patent

active

048132721

ABSTRACT:
There is a bridge circuit which is driven by a constant-current including a thermistor. The bridge circuit is constituted by strain gages defined by P-type diffused layers. Strain gages which constitute in combination the bridge circuit are defined by diffused resistor layers having a surface impurity concentration which is set so as to fall within the range from 2.3.times.10.sup.18 to 2.5.times.10.sup.18 atoms/cm.sup.3. The B constant of the thermistor is selected so as to fall within the range from 1400K to 2400K.

REFERENCES:
patent: 4173148 (1979-11-01), Yamada et al.
P. 62 of the "Collection of Papers Scheduled to be Presented at 36th Meeting of Applied Physics Society 24a-D-6 (1975)".

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