Semiconductor pressure sensor

Measuring and testing – Fluid pressure gauge – Electrical

Reexamination Certificate

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Details

C073S722000, C257S419000

Reexamination Certificate

active

11225019

ABSTRACT:
A semiconductor pressure sensor is not influenced by a charged object in a fluid to be measured or an electric field from the outside, so satisfactory sensitivity and accuracy can be ensured. The semiconductor pressure sensor is provided with a diaphragm4that responds to the pressure of the fluid to be measured. The diaphragm includes a silicon substrate with piezoresistive elements, which together constitute a bridge circuit, being embedded therein, and a shield film for electromagnetic shielding formed on a surface of the silicon substrate at a side thereof at which the fluid to be measured is in contact with the silicon substrate. The shield film is electrically connected to the silicon substrate so as to have the same potential as that of the silicon substrate.

REFERENCES:
patent: 5668033 (1997-09-01), Ohara et al.
patent: 6229190 (2001-05-01), Bryzek et al.
patent: 6578426 (2003-06-01), Imai et al.
patent: 6877383 (2005-04-01), Horie et al.
patent: 2002/0078755 (2002-06-01), Imai et al.
patent: 2003/0019299 (2003-01-01), Horie et al.
patent: 11-281509 (1999-10-01), None

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