Semiconductor pressure sensor

Details Semiconductor pressure sensor Semiconductor pressure sensor

2005-04-19

2005-04-19

Oen, William (Department: 2855)

Measuring and testing

Fluid pressure gauge

Electrical

Reexamination Certificate

active

06880406

ABSTRACT:
A semiconductor pressure sensor comprises a non-single-crystal-silicon-based substrate, a movable insulating diaphragm, at least one piezoresistor positioned on the insulating diaphragm, an insulating supporter positioned on the non-single-crystal-silicon-based substrate for fixing two ends of the insulating diaphragm and forming a cavity between the insulating diaphragm and the non-single-crystal-silicon-based substrate, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the insulating diaphragm and the piezoresistor.

REFERENCES:
patent: 4996627 (1991-02-01), Zias et al.
patent: 5706565 (1998-01-01), Sparks et al.
patent: 6137120 (2000-10-01), Shindo et al.
patent: 6177706 (2001-01-01), Shindo et al.

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