Semiconductor pressure sensor

Details Semiconductor pressure sensor Semiconductor pressure sensor

1988-02-10

1988-09-20

Woodiel, Donald O.

Measuring and testing

Fluid pressure gauge

Diaphragm

73727, 73DIG4, 338 4, 338 42, G01L 708, G01L 906

Patent

active

047716380

ABSTRACT:
A semiconductor pressure sensor composed of a substrate formed adopting a thin-film forming technique and a diaphragm which is formed on the surface of the substrate. The sensor includes an insulating diaphragm film which is formed of an etching-resistant material on the main surface of the semiconductor substrate such as to coat it, at least one etching hole provided such as to penetrate the diaphragm film and reach the substrate, a reference pressure chamber which is formed by etching to remove a part of the semiconductor substrate and a disappearing film through the etching hole, and at least one strain gage which is provided at a predetermined position in the pressure receiving region of the diaphragm film.

REFERENCES:
patent: 4432007 (1984-02-01), Cady

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