Semiconductor pressure sensor

Details Semiconductor pressure sensor Semiconductor pressure sensor

1984-09-27

1987-07-14

Goldberg, E. A.

Electrical resistors

Resistance value responsive to a condition

Fluid- or gas pressure-actuated

338 5, 338 4, 338 36, G01L 122

Patent

active

046805699

ABSTRACT:
A semiconductor pressure sensor wherein a semiconductor chip of diaphragm type is supported by a mount plate through a thin tubular supporting member or a pressure inlet tube having a coefficient of thermal expansion similar to that of a substrate constituting the semiconductor chip. The semiconductor chip is fixed to the thin tubular supporting member or the pressure inlet tube by means of a bonding material, and the thin tubular supporting member or the pressure inlet tube is fixed by means of a bonding material having a high bonding strength with respect thereto, thus absorbing thermal stress produced due to the difference in coefficient of thermal expansion.

REFERENCES:
patent: 4127840 (1978-11-01), House
patent: 4412203 (1983-10-01), Kurtz et al.
patent: 4499774 (1985-02-01), Tsuchiya et al.
patent: 4502335 (1985-03-01), Wamstad et al.
patent: 4540115 (1985-09-01), Hawrylo
Yamada et al, "A Piezoresistive Integrated Pressure Sensor", Sensors and Actuators, 4 (1983), pp. 63-69.
Takahama et al, "Diffused Silicon Pressure Sensor", UDC, 531.787.91.084, Aug., 1981, pp. 518-522.

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