Semiconductor pressure sensor

Details Semiconductor pressure sensor Semiconductor pressure sensor

1991-09-30

1993-06-15

Lateef, Marvin M.

Electrical resistors

Strain gauge type

With temperature compensation

338 5, G01L 122

Patent

active

052203050

ABSTRACT:
A semiconductor pressure sensor chip has a pattern including first diffusion sections in which external connection contacts are formed. Resistors are connected to the first diffusion sections through second diffusion sections in a bridge circuit such that the distances between a contact and the second diffusion sections connected to a first diffusion section where the contact is disposed are equal. This arrangement reduces drift of the offset voltage with changes in temperature, thus providing a high precision semiconductor pressure sensor with an improved yield.

REFERENCES:
patent: 4320664 (1982-03-01), Rehn et al.
patent: 4404539 (1983-09-01), Yamada et al.
patent: 4462018 (1984-07-01), Yang et al.
patent: 4556807 (1985-12-01), Yamada et al.
patent: 5002901 (1991-03-01), Kurtz et al.

Affiliated with

Also associated with

Rating

Semiconductor pressure sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor pressure sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor pressure sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1046213