Semiconductor pressure sensor

Measuring and testing – Fluid pressure gauge – Diaphragm

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Details

73721, 92103SD, 338 4, G01L 708, G01L 906

Patent

active

051652820

ABSTRACT:
A semiconductor pressure sensor comprises a diaphragm formed by anisotropic etching of silicon single crystal, characterized in that an etch-stop layer is provided at the site where etching is to be stopped, and that an etch-stop layer having insulating property is provided as the insulating layer of the pressure-sensitive portion.

REFERENCES:
patent: 3858150 (1974-12-01), Gurtler et al.
patent: 3938175 (1976-02-01), Jaffe et al.
patent: 4784721 (1988-11-01), Holmen et al.

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