Semiconductor pressure sensor

Electricity: conductors and insulators – Feedthrough or bushing – Compression

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Details

357 80, 357 74, 174 52H, 174 5054, H01L 2984

Patent

active

045636974

ABSTRACT:
A semiconductor pressure sensor has a sealing reference pressure chamber container formed by a cap and a metal bottom plate, a semiconductor pressure sensitive diaphragm to which pressure to be measured is applied on the side of the diaphragm opposite to the inside space of said container, and a circuit substrate having a circuit connected to a strain gauge mounted on the pressure sensitive diaphragm. The diaphragm is mounted to said bottom plate, and the circuit substrate is fixed to one side of a metal plate having a thermal expansion factor approximately equal to the thermal expansion factor of the circuit substrate material. The other side of the metal plate is fixed to said bottom plate only over a relatively small area. The arrangement reduces thermal stress to the circuit substrate.

REFERENCES:
patent: 4127840 (1978-11-01), House
patent: 4172261 (1979-10-01), Tsuzuki et al.
patent: 4218694 (1980-08-01), Grzybowski
patent: 4287501 (1981-09-01), Tominaga et al.
patent: 4314225 (1982-02-01), Tominaga et al.
patent: 4314226 (1982-02-01), Oguro et al.

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