Semiconductor pressure detecting device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal

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257415, 257417, 73723, 73724, 73725, 73726, 73727, 73DIG4, 438 50, 438 51, H01L 2714, H01L 2982, H01L 2984

Patent

active

060668822

ABSTRACT:
A semiconductor pressure detecting device which effectively reduces stress that occurs on a base member due to welding between cap and the base member or any external load. The semiconductor pressure detecting device includes a semiconductor sensor element capable of detecting a strain and/or stress that occurs on a thin-walled pressure receiving portion; a pedestal seat for joining and supporting the semiconductor sensor element; a base member for joining and supporting the pedestal seat; and a cap member welded and joined to the base member so as to cover the base member, the pedestal seat and the semiconductor sensor element. A fluid pressure that acts on a pressure chamber is detected by the semiconductor sensor element, the base member has a body portion of a specified thickness and a thin-walled flange portion formed integrally with an outer circumferential portion of the body portion, a flange portion is provided at an opening end of the cap member and is welded and joined to the flange portion of the base member, a thickness of the flange portion of the base member being set substantially equal to or less than a thickness of the flange portion of the cap member.

REFERENCES:
patent: 4843454 (1989-06-01), Kato et al.
patent: 5050838 (1991-09-01), Beatty et al.
patent: 5408885 (1995-04-01), Araki
patent: 5461922 (1995-10-01), Koen
patent: 5629538 (1997-05-01), Lipphardt et al.
patent: 5756899 (1998-05-01), Ugai et al.
patent: 5852320 (1998-12-01), Ichihasi

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