Semiconductor power switch with thyristor

Details Semiconductor power switch with thyristor Semiconductor power switch with thyristor

1987-09-17

1989-04-25

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 39, 357 55, 357 64, 307637, 307642, 307319, H01L 2974

Patent

active

048252727

ABSTRACT:
A power switch device comprises an asymmetrically blocking thyristor (ASCR), with which a diode is connected in series. The ASCR as well as the diode require only about one half the central zone thickness as compared with a symmetrically blocking thyristor laid out for the same blocking voltage in reverse direction (U.sub.RRM). For the series connection of the ASCR and diode, this results in a much lower blocking delay charge (Q.sub.rr).

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Standard Search Report, File RS 75317 DE, 13.05.1986.
IEEE Transaction on Electron Devices, ED-31, No. 6, Jun. 1984; "The Influence of Surface Charge and Bevel Angle on the Blocking Behavior of a High-Voltage p.sup.+ -n-n.sup.+ Device," Brieger et al.

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