Semiconductor power device with bias circuit

Details Semiconductor power device with bias circuit Semiconductor power device with bias circuit

2008-01-17

2010-06-01

Mottola, Steven J (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including d.c. feedback bias control for stabilization

C330S307000

Reexamination Certificate

active

07728671

ABSTRACT:
An RF power circuit comprises a power transistor having a gate and drain, an output matching network coupled to the drain and an input matching network coupled to the gate. A closed-loop bias circuit is integrated with the power transistor on the same die and coupled to the gate for biasing the RF power transistor based on a reference voltage applied to the bias circuit.

REFERENCES:
patent: 7288992 (2007-10-01), Birkbeck
patent: 7564303 (2009-07-01), Perugupalli et al.
Curtice, W. et al., “New LDMOS Model Delivers Powerful Transistor Library—Part 1: The CMC Model,” High Frequency Electronics, Oct. 2004, pp. 18-25.
Wood, S. et al., “New LDMOS Model Delivers Powerful Transistor Library—Part 2: Library Applications,” High Frequency Electronics, Nov. 2004, pp. 26-33.

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