Semiconductor power device integrated with temperature protectio

Details Semiconductor power device integrated with temperature protectio Semiconductor power device integrated with temperature protectio

1988-06-06

1990-02-20

Mintel, William

357 28, 357 234, 357 34, H01L 2702

Patent

active

049031066

ABSTRACT:
The present invention relates to a semiconductor device employed for high power use and a method of manufacturing the same. According to the present invention, a temperature detecting device is formed on the same substrate with a power device. Thus, there is no need to add an external temperature sensor, whereby the device can be reduced in size. Further, an abnormal temperature of the power device is accurately detected by the temperature detecting device, whereby thermal breakdown of the power device is reliably prevented.

REFERENCES:
patent: 4142115 (1979-02-01), Nakata et al.
patent: 4242598 (1980-12-01), Johnson et al.
patent: 4260911 (1981-04-01), Brown, Jr. et al.
patent: 4574205 (1986-03-01), Nagano
patent: 4730228 (1988-03-01), Einzinger et al.
patent: 4760434 (1988-07-01), Tsuzuki et al.
Motorola: Smartpower Technical Overview and Applications Information, 1985.

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