Semiconductor power device having a diamond shaped metal...

Details Semiconductor power device having a diamond shaped metal... Semiconductor power device having a diamond shaped metal...

2005-05-24

2005-05-24

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S401000, C257S774000, C257S776000, C438S622000

Reexamination Certificate

active

06897561

ABSTRACT:
A transistor (10) is formed as a matrix of transistor cells (13) that have drain metal strips (50) for contacting drains (15) of the transistor cells and source metal strips (55) for contacting sources (35) of the transistor cells. An interconnect layer (1030) overlying the matrix of transistor cells has first portions (201) that contact one the drain metal strips with first and second vias (79) and second portions (101) that contact one of the source metal strips with third and fourth vias (78).

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