Semiconductor power component with a vertical current path...

Details Semiconductor power component with a vertical current path... Semiconductor power component with a vertical current path...

2006-08-16

2009-12-15

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S464000, C438S773000, C257S328000, C257SE29118, C257SE29198, C257SE29257, C257SE23031, C257SE21238, C257SE23037, C257S724000, C257S177000, C257S182000, C257S692000, C257S666000, C257S690000, C257S691000, C257S693000

Reexamination Certificate

active

07632718

ABSTRACT:
A semiconductor power component using flat conductor technology includes a vertical current path through a semiconductor power chip. The semiconductor power chip includes at least one large-area electrode on its top side and a large-area electrode on its rear side. The rear side electrode is surface-mounted on a flat conductor chip island of a flat conductor leadframe and the top side electrode is electrically connected to an internal flat conductor of the flat conductor leadframe via a connecting element. The connecting element includes a bonding strip extending from the top side electrode to the internal flat conductor and further includes, on the top side of the bonding strip, bonding wires extending from the top side electrode to the internal flat conductor.

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