Semiconductor power component and a method of producing same

Details Semiconductor power component and a method of producing same Semiconductor power component and a method of producing same

2005-09-27

2005-09-27

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming lateral transistor structure

C257S497000, C257S578000

Reexamination Certificate

active

06949439

ABSTRACT:
A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 μm.

REFERENCES:
patent: 6734520 (2004-05-01), Kapels et al.
patent: 31 10 230 (1982-01-01), None
patent: 0 969 501 (2000-01-01), None
patent: 1 017 093 (2000-07-01), None
patent: 02 001985 (1990-01-01), None
Yamashita et al., “A Relation between Dynamic Saturation Characteristics and Tail Current of Nonpunchthrough IGBT”, Industry Applications Conference, IAS 1996, Thrity-First IAS Annual Meeting, 1996, Conference Record of the 1996 IEEE San Diego, CA, Oct. 6-10, 1996, pp. 1425-1432.
C. Yun et al., “High Performance 1200C PT IGBT with Improved Short-Circuit Immunity”, Proceedings of the 10thInternational Symposium on Power Semiconductor Devices and IC's, ISPSD 1998, Jun. 3, 1998, pp. 261-264.**
Patent Abstracts of Japan, vol. 014, No. 133, Mar. 13, 1990.
Laska et al.,Solid-State Electronics, vol. 35, No. 5, pp. 681-685.*
T. Laska et al.,Conf. Proc. ISPSD, 1997, pp. 361-364.*
K. D. Hobart et al.,1999 Proc. IEEE, pp. 45-48.*
J. Yedinak et al.,Conf. Proc. ISPSD, 1998, pp. 399-402.*
Takei et al.,Conf. Proc. ISPSD, 1999, Appendix Paper 7.1.

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