Semiconductor power amplifier integrated circuit

Details Semiconductor power amplifier integrated circuit Semiconductor power amplifier integrated circuit

1994-04-25

1995-04-18

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330310, H03F 316

Patent

active

054081980

ABSTRACT:
A power amplifier is provided which operates in a quasi-microwave band between 0.8 GHz and 2 GHz with a high output, a small size and low power consumption. Junction type GaAs FETs are connected in a multi-stage manner to form an amplification circuit. An impedance matching/phase adjusting circuit is provided between the respective stages. An input impedance matching circuit, an output impedance matching circuit and bypass capacitors for a power source terminal are provided. Further, a gain control terminal and gate bias terminals for setting operating points of the JFETs are provided, thereby forming an entire arrangement as a semiconductor integrated circuit.

REFERENCES:
patent: 4275361 (1981-06-01), Schurmann
patent: 4901032 (1990-02-01), Komiak
Cellular Telecommunication GaAs Power Modules, Applied Microwave, Fall 1992, pp. 83-88.
"Low-Power-Voltage Operated Power Amplification Module", National Conference of the Institute of Electronics, Information and Communication Engineers of Japan, Spring 1993, Paper C-83.

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