Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2005-01-04
2005-01-04
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S030000, C438S149000, C438S785000, C257S103000, C257S410000
Reexamination Certificate
active
06838308
ABSTRACT:
On a transparent substrate, by use of, for instance, vapor deposition, an Al film is formed. Subsequently, with a DC-bias applied on a surface of the Al film, a first zinc oxide thin film is formed by use of a sputtering method. On a surface of the first zinc oxide thin film, according to an atmospheric MO-CVD method, a second zinc oxide thin film is formed. When the second zinc oxide thin film deposited by use of an MO-CVD method is formed on the first zinc oxide thin film having a-axis orientation, the second zinc oxide thin film becomes to have the a-axis orientation. Since the Al thin film, owing to heat during the deposition by use of the MO-CVD method, is absorbed in the first zinc oxide thin film, the transparency is improved. As a result, a sample having a ZnO/ZnO/Al/glass structure becomes high in the transparency as a whole.
REFERENCES:
patent: 6727522 (2004-04-01), Kawasaki et al.
patent: 2000-137342 (2000-05-01), None
Everhart Caridad
Hayes & Soloway P.C.
Sharp Corporation
Tohoku Techno Arch Co., Ltd.
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