Semiconductor plasma oxidation

Details Semiconductor plasma oxidation Semiconductor plasma oxidation

1979-03-01

1980-11-04

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

204164, B05D 306

Patent

active

042320577

ABSTRACT:
Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure.

REFERENCES:
patent: 3108900 (1963-10-01), Papp
patent: 3424661 (1969-01-01), Androshuk et al.
patent: 3485666 (1969-12-01), Sterling et al.
patent: 3615956 (1971-10-01), Irving et al.
patent: 3920483 (1975-11-01), Johnson et al.
patent: 3935328 (1976-01-01), Sugano et al.
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4123663 (1978-10-01), Horiike
patent: 4138306 (1979-02-01), Niwa
Pulfrey et al., "Solid State Electronics", V. 17, 1974, pp. 627-632.

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