Semiconductor photonic nano communication link apparatus

Details Semiconductor photonic nano communication link apparatus Semiconductor photonic nano communication link apparatus

2007-04-30

2009-10-13

Peng, Charlie (Department: 2883)

Optical waveguides

Planar optical waveguide

C385S131000

Reexamination Certificate

active

07603016

ABSTRACT:
A CMOS compatible ten-gigabit-per-second region nano-waveguide included photonic communication link apparatus of low energy use per transmitted bit. An embodiment of the link includes an electrically pumped laser, an electro absorption modulator and a photodetector for the 1.5 to 2.0 micrometer infrared spectral region; omission of the separate electro absorption modulator is additionally disclosed. Each of these three nano-scale elements preferably includes active semiconductor crystal material situated in a preferably Silicon resonator within a nano-strip waveguide. The resonator is defined by dispersed resonator mirrors having tapered separation distance one dimensional photonic crystal lattice apertures of oxide holes or slots. Each of the three devices may be a semiconductor heterodiode pumped or controlled by laterally disposed wings enclosing the resonator to form a lateral PIN heterodiode for current injection or high E-field generation depending on bias and composition conditions selected.

REFERENCES:
patent: 4789642 (1988-12-01), Lorenzo et al.
patent: 5163118 (1992-11-01), Lorenzo et al.
patent: 5354709 (1994-10-01), Lorenzo et al.
patent: 5548128 (1996-08-01), Soref et al.
patent: 5838870 (1998-11-01), Soref
patent: 6888175 (2005-05-01), Wang et al.
patent: 6897471 (2005-05-01), Soref et al.
patent: 6995076 (2006-02-01), Wang et al.
patent: 7200302 (2007-04-01), LoCascio et al.
patent: 7266263 (2007-09-01), Ahn et al.
patent: 7391801 (2008-06-01), Soref et al.
Q. Xu et al., “Micrometre-Scale Silicon Electro-Optic Modulator”,Nature, May 19, 2005, pp. 325-327, vol. 435.
J. Menendez et al., “Type-I Ge/Ge1-x-ySixSnyStrained-Layer Heterostructures with a Direct Ge Band Gap”,Applied Physics Letters, Aug. 16, 2004, pp. 1175-1177, vol. 85.
J.T. Robinson et al., “Ultrasmall Mode Volume in Dielectric Optical Microcavities”,Physical Review Letters, 2005, p. 143901, vol. 95.
R. Soref et al, “Advances in SiGeSn/Ge Technology”, Invited Paper, Symposium L,Materials Research Society Fall Meeting, Boston MA, Dec. 30, 2006 (to be published).
L. Colace et al., “Ge on Si p-i-n Photodiodes Operating at 10 Gb/s”,Applied Physics Letters, 2006, p. 101111, vol. 88.
S.J. Koester et al., “Germanium-on-SOI Infrared Detectors for Integrated Photonic Application”IEEE Journal of Selected Topics in Quantum Electronics, Dec. 2006, pp. 1489-1502, vol. 12, No. 6.
M. Kim, Silicon-Based Quantum Well Laser,Final Report on AFOSR Phase 1 STTR, Quant Tera Corporation, Jun. 16, 2006 (unpublished).
J. Liu et al., “High-Performance Tensile-Strained Ge p-i-n Photodetectors on a Si Platform”,Applied Physics Letters, 2005, p. 103501, vol. 87.
S. Jongthammanurak et al., “Large Electro-Optic Effect inTensile Strained Ge-on-Si films”,Applied Physics Letters, 2006, pp. 161115-1 to 161115-3, vol. 89.
P. Lalanne et al., “Two Physical Mechanisms for Boosting the Quality Factor to Cavity Volume Ratio of Photonic Crystal Microcavities”,Optics Express, 2004, pp. 458-467, vol. 12.
S. Strauf et al., “Self-Tuned Quantum Dot Gain in Photonic Crystal Lasers”,Physical Review Letters, 2006, p. 127404, vol. 96.
J.F. Liu et al., “Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform”, Paper ThA2,IEEE 3rdInternational Conference on Group IV Photonics, Ottawa CA, Sep. 14, 2006.
S.G. Cloutier et al., “Optical Gain and Stimulated Emission in Periodic Nanopatterned Silicon”,Nature Materials 2005, pp. 887-891, vol. 4.
S.G. Cloutier et al., “Enhancement of Radiative Recombination in Silicon Via Phonon Localization and Selection-Rule Breaking”,Advanced Materials(Wiley VCH-Verlag), 2006, pp. 841-844, vol. 18.

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