Semiconductor photonic integrated circuit and fabrication proces

Details Semiconductor photonic integrated circuit and fabrication proces Semiconductor photonic integrated circuit and fabrication proces

1996-07-12

1997-12-30

Healy, Brian

Optical waveguides

Integrated optical circuit

385 8, 385 9, 372 45, 372 50, G02B 612, H01S 319

Patent

active

057039747

ABSTRACT:
On a surface of an n-InP substrate, a mask of SiO.sub.2 layer wide in an active region and narrow in a passive region and having a constant gap width. In a waveguide region defined between the masks, a waveguide structure constituted of an n-InGaAsP guide layer, an undoped InGaAsP optical waveguide layer and a p-InP clad layer is selectively grown to form. Again, utilizing SiO.sub.2 layer, a mask is formed on the surface of the p-InP layer in the active region and a pair of masks defining the waveguide structure is formed in a the passive region, and high resistance InP layer is grown. Also, in the active region, a p-InP layer, a p-InGaAs contact layer are selectively grown. By forming SiO.sub.2, a window is formed to form p-side electrode. An n-type electrode is formed on the back surface of the substrate, By this, a device having an optical loss in the active region and passive region becomes low, a coupling coefficient between both regions is high. Also, an element capacitance can become small to enable high speed operation.

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K.Y. Liou et al, Operation of Integrated InGasAsP-InP Optical Amplifier--Monitoring Detector with Feedback Control Circuit, IEEE Photonics Technology Letters, vol. 2, No. 12, Dec. 1990.
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Aoki et al, InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy . . . , IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993.

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