Metal treatment – Stock – Ferrous
Patent
1973-04-03
1977-01-25
James, Andrew J.
Metal treatment
Stock
Ferrous
357 13, 357 17, 357 19, 357 30, 357 32, 148175, H01L 2990, H01L 3300, H01L 3112, H01L 2714
Patent
active
040054683
ABSTRACT:
A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film of electrically insulating material such as silicon dioxide of a substantial thickness on a main surface of a semiconductor substrate so as to have a plurality of portions of said main surface exposed through a corresponding plurality of square or rectangle openings laid out at right angles, said openings being defined by said insulating material film, depositing a tin oxide film on the open areas of the semiconductor substrate, removing a portion of said tin oxide film just overlying the said insulating film for separating the respective barrier regions formed between the tin oxide film and the substrate, and providing a metal layer on said insulating film for connecting the end portion of the tin oxide film of the adjacent barrier regions. The resultant photoelectric device, even if a total light receiving area is increased, shows an improved photoelectric characteristic at low and high illumination.
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Metal-Silicon Shottky Barriers; by Turner et al.; Solid State Electronics; Mar. 1968; vol. 11, No. 3, pp. 291-300.
Miura Nobuaki
Miyamoto Mikizo
Tanimura Shigeru
James Andrew J.
Omron Tateisi Electronics Co.
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