Semiconductor photoelectric device having a matrix wiring sectio

Details Semiconductor photoelectric device having a matrix wiring sectio Semiconductor photoelectric device having a matrix wiring sectio

1990-02-21

1991-10-29

Mintel, William

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 32, 357 2, 357 58, 2505781, 250211R, H01L 2714

Patent

active

050619799

ABSTRACT:
A semiconductor device wherein m.times.n switch means connected to m.times.n functional elements for transferring signals by switching, and a matrix wiring section having wiring connected respectively to said m.times.n switching means are formed on a common substrate, and wherein said matrix wiring section comprises a lamination structure formed by stacking, at least, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a semiconductor layer, and a third conductive layer in this order.

REFERENCES:
patent: 4931661 (1990-06-01), Fukaya

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