Semiconductor photoelectric device

Details Semiconductor photoelectric device Semiconductor photoelectric device

1973-08-14

1976-04-20

James, Andrew J.

357 16, 357 17, 357 23, 357 60, H01L 2948, H01L 2956

Patent

active

039523233

ABSTRACT:
A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film or silicon dioxide on a main surface, having a crystallographic orientation of (100), of a semiconductor substrate of N-type silicon, the film being formed to a thickness less than 25A., for example, and then further depositing thereon a tin oxide film. It was found that adoption of the abovementioned (100) orientation reduces the reverse saturation current and thus the dark current of the device, with the result that the open voltage of the device is accordingly increased. It was also found that proper choice of specific resistivity of the substrate improves linearity of the photoelectric characteristic.

REFERENCES:
patent: 3106489 (1963-10-01), Lepselter
patent: 3391282 (1968-07-01), Kabell
patent: 3457473 (1969-07-01), Okada et al.
patent: 3596151 (1971-07-01), Eldridge
patent: 3679949 (1972-07-01), Uekusa et al.
patent: 3742317 (1973-06-01), Shao
patent: 3760240 (1973-09-01), Bergt
Solid-State Electronics, Metal-Silicon Schottky Barriers, by Turner, Vol. No. 3 pp. 291-300 Mar. 1968.

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