Patent
1981-09-21
1985-07-02
James, Andrew J.
357 30, 357 52, H01L 2978
Patent
active
045271828
ABSTRACT:
A semiconductor imager comprises a first and a second region (41, 42) which have a conductivity type opposite to a substrate (21) and are reverse biassed relative to the substrate beneath photosensitive regions (22) of each row and a reading device (26, 33) for the row, respectively, to be completely and not to be completely depleted, respectively. The imager may or may not comprise such a covering region (77) on each photosensitive region as may have the conductivity type of the first and the second regions and be not completely depleted. It is possible to provide a line sensor or a photodiode of a similar structure. Preferably, the first and the second regions have a common impurity concentration lower than the photosensitive regions and are respectively thinner and thicker relative to each other. The covering region preferably has the impurity concentration of each channel stopper (23).
REFERENCES:
patent: 4148048 (1979-04-01), Takemoto et al.
patent: 4206371 (1980-06-01), Weimer
patent: 4373167 (1983-02-01), Yamada
Chamberlain, S. G., "High Speed Scanner Photoelement with Gain", IBM Tech. Discl. Bull., vol. 19, No. 11, pp. 4458-4459, Apr. 1977.
Ishihara Yasuo
Oda Eiji
Teranishi Nobukazu
James Andrew J.
Mintel William A.
Nippon Electric Co. Ltd.
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