Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-07-11
2006-07-11
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S434000, C257S435000, C257S437000
Reexamination Certificate
active
07075164
ABSTRACT:
A semiconductor photoelectric conversion device includes: a number of photoelectric conversion elements formed in a principal surface of the semiconductor substrate; functional devices formed in the semiconductor substrate adjacent to photoelectric conversion elements; a light shielding film formed above the semiconductor substrate for shielding light above the functional devices and having a window above each photoelectric conversion element; and an effective wavelength shortening member disposed in the windows, and being made of transmissive material having a high refractive index, thereby shortening an effective wavelength of light passing through the windows.
REFERENCES:
patent: 4845375 (1989-07-01), Tsushima
patent: 5371397 (1994-12-01), Maegawa et al.
patent: 5583354 (1996-12-01), Ishibe
patent: 5585653 (1996-12-01), Nakashiba
patent: 5593913 (1997-01-01), Aoki
patent: 5763999 (1998-06-01), Matsuno et al.
patent: 5986704 (1999-11-01), Asai et al.
patent: 6066511 (2000-05-01), Fukusyo
patent: 6069350 (2000-05-01), Ohtsuka et al.
patent: 6081018 (2000-06-01), Nakashiba et al.
patent: 6255640 (2001-07-01), Endo et al.
patent: 6468826 (2002-10-01), Murakami et al.
patent: 2001/0033007 (2001-10-01), Lee
patent: 2001/0042875 (2001-11-01), Yoshida
patent: 2002/0048840 (2002-04-01), Tanigawa
patent: 2002/0134420 (2002-09-01), Kyoda et al.
patent: 2002/0195628 (2002-12-01), Yamada
patent: 0 242 663 (1987-10-01), None
patent: 0 441 594 (2001-08-01), None
patent: 03-283572 (1991-12-01), None
patent: 05-095098 (1993-04-01), None
patent: 08-321595 (1996-12-01), None
“A 1/3-in 270 000 Pixel CCD Image Sensor,” Kuriyama et al.,IEEE Transactions on Electron Devices, vol. 38, No. 5, pp. 949-953 (May 1991).
“A 1″ Format 1.5M Pixel IT-CCD Image Sensor for an HDTV Camera System,” Sakakibara et al.,IEEE Transactions on Consumer Electronics, vol. 37, No. 3, pp. 487-493 (Aug. 1991).
European Search Report for EP 02027498 dated Nov. 16, 2004.
Arent & Fox PLLC
Fuji Photo Film Co. , Ltd.
Lewis Monica
Wilczewski Mary
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