Semiconductor photoelectric conversion device for light incident

Details Semiconductor photoelectric conversion device for light incident Semiconductor photoelectric conversion device for light incident

1985-03-18

1988-08-02

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250221, H01J 4014

Patent

active

047615478

ABSTRACT:
The position detector comprises a semiconductor layer of i type amorphous silicon layer and a P type amorphous silicon layer is formed on one surface thereof and an N type amorphous layer is formed on the opposite surface. A transparent resistance layer is formed on one surface of the semiconductor layer. Collector electrodes are provided at the sides of the resistance layer for deriving out a position signal.

REFERENCES:
patent: 3435232 (1969-03-01), Sorensen
patent: 3814199 (1974-06-01), Jones
patent: 3840741 (1974-10-01), Melchior
patent: 3859521 (1975-01-01), Connors et al.
patent: 4366377 (1982-12-01), Notthoff et al.
patent: 4451838 (1984-05-01), Yamazaki
patent: 4559552 (1985-12-01), Yamazaki
patent: 4584510 (1986-04-01), Hollow
patent: 4616833 (1986-10-01), Geller

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