Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer
Patent
1981-09-14
1985-02-05
Edlow, Martin H.
Batteries: thermoelectric and photoelectric
Thermoelectric
Radiation pyrometer
357 16, 357 58, 357 59, 136258, H01L 4500
Patent
active
044980922
ABSTRACT:
A semiconductor device is provided with at least first and second semiconductor regions having defined therebetween a junction. The first semiconductor region or both of the first and second semiconductor regions are each formed of a semiconductor having a structure in which the degree of crystallization varies spatially. In this case, the first and second semiconductor regions have different conductivity types and form therebetween a PN, PI or NI junction; the first and second semiconductor regions have different energy gaps and form therebetween a heterojunction; the first and second semiconductor regions have different energy gaps, the same conductivity type and form therebetween a heterojunction; or the first and second semiconductor regions have the same conductivity type, different impurity concentrations and form therebetween an HL (High-Low) junction.
The semiconductor region having the structure in which the crystallization degree varies spatially is typically formed of a semiconductor which is composed of a mixture of a microcrystalline semiconductor and a non-crystalline semiconductor, the mixture is doped with a dangling bond neutralizer, and the microcrystalline semiconductor has a lattice strain.
REFERENCES:
patent: 4024558 (1977-05-01), Merrin
patent: 4069492 (1978-01-01), Pankovis et al.
patent: 4122476 (1978-10-01), Hovel et al.
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4224084 (1980-09-01), Pankove
patent: 4239554 (1980-12-01), Yamazaki
patent: 4254429 (1981-03-01), Yamazaki
patent: 4272641 (1981-06-01), Hanak
patent: 4292461 (1981-09-01), Hovel
Baker Joseph J.
Edlow Martin H.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
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