Semiconductor photoelectric conversion device

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136256, 136258, 357 30, H01L 3106

Patent

active

043202489

ABSTRACT:
An MIS type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, current-permeable, insulating or semi-insulating layer disposed on the semiconductor layer, a first conductive layer disposed on the light-transparent, current-permeable, insulating or semi-insulating layer, and a second conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, current-permeable, insulating or semi-insulating layer, and in which when light is incident to the semiconductor layer from the outside of the first conductive layer, a photoelectric conversion function is obtained by the presence of a barrier set up by the light-transparent, current-permeable, insulating or semi-insulating layer.
In such an MIS type semiconductor photoelectric conversion device, the light-transparent, current-permeable, insulating or semi-insulating layer is formed of a nitride. The nitride layer is formed of silicon nitride or silicon nitride and a conductive metal nitride. In the MIS type semiconductor photoelectric conversion device, the first conductive layer has a comb- or grid-like pattern and an anti-reflection layer is formed to cover the first conductive layer. The light-transparent, current-permeable, insulating or semi-insulating layer and the anti-reflecting layer are both formed of a nitride.

REFERENCES:
patent: 3549411 (1970-12-01), Bean et al.
patent: 4117506 (1978-09-01), Carlson et al.
patent: 4167015 (1979-09-01), Hanak
E. J. Charlson et al., "An MIS Photovoltaic Cell with Silicon Nitride Insulator", Conf. Record, 13th IEEE Photovoltaic Specialists Conf., 1978, pp. 656-660.

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