Semiconductor photoelectric conversion device

Details Semiconductor photoelectric conversion device Semiconductor photoelectric conversion device

1983-08-09

1986-12-30

Davie, James W.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136255, 357 2, 357 15, 357 16, 357 34, H01L 2714, H01L 3100

Patent

active

046332871

ABSTRACT:
An N.sup.+ N.sup.- (or I)PIN or P.sup.+ P.sup.- (or I)NIP type photo transistor comprises semiconductor layers serving as collector, base and emitter regions and a semiconductor layer which is disposed between the semiconductor layers serving as the base and emitter regions and serves as a photo carrier generating regions. The semiconductor layers serving as the photo carrier generating region and emitter regions are both formed of a non-single-crystal semiconductor. By replacing the semiconductor layer serving as the emitter region in the N.sup.+ N.sup.- (or I)PIN or P.sup.+ P.sup.- (I)NIP type photo transistor with a conductive layer which makes Schottky contact with the non-single-crystal semiconductor layer as the photo carrier generating region, a Schottky junction type photo transistor is obtained. By replacing the above said conductive layer with conductive layer which is disposed on the non-single-crystal semiconductor layer as the photo carrier generating region through a barrier film which permits flowing therethrough of tunnel current, a tunnel type photo transistor is constituted.

REFERENCES:
patent: 4151006 (1979-04-01), DeGraaff et al.
patent: 4341954 (1982-07-01), Mizushima

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