1976-10-20
1979-02-27
Miller, Jr., Stanley D.
357 13, 357 15, 357 89, 357 90, H01L 2714
Patent
active
041422007
ABSTRACT:
The impurity concentration distribution of the layers of a multilayer junction diode is varied such that the concentration in a first region contiguous to the junction is low, in a second region is high, in a third region is low and in a last region gradually increases in the direction away from the junction.
REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 3921192 (1975-11-01), Goronkin et al.
patent: 3959646 (1976-05-01), DE Cremoux
patent: 3990099 (1976-11-01), Duigon et al.
patent: 4060820 (1977-11-01), Pucel et al.
Kajiyama Kenji
Kanbe Hiroshi
Kimura Tatsuya
Mizushima Yoshihiko
Davie James W.
Helzer Charles W.
Miller, Jr. Stanley D.
Nippon Telegraph & Telephone Corp.
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