Semiconductor photodiode having the electrodes formed on the sam

Details Semiconductor photodiode having the electrodes formed on the sam Semiconductor photodiode having the electrodes formed on the sam

1995-10-26

1997-11-04

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257436, 257437, 257458, 257459, H01L 310328

Patent

active

056843070

ABSTRACT:
A semiconductor optical device having a small difference in level between first and second electrodes includes, at a first electrode, a junction of a p-type contact and an electron trapping semi-insulating semiconductor region in an n-type semiconductor substrate which is rectifying. At the second electrode, a diode includes a p-type window region, a light absorption region, and the n-type semiconductor substrate. When light enters this diode, a photocurrent is generated. When a bias voltage is applied to the diode in a reverse direction, the photocurrent flows between the electrodes.

REFERENCES:
patent: 4947400 (1990-08-01), Dutta
Makiuchi et al, "Planar Type InGaAs/InP-Pin Photodiode", Spring National Convention Record, The Institute of Electronics, Information and Communication Engineers, vol. 4, 1991, p. 201.

Affiliated with

Also associated with

Rating

Semiconductor photodiode having the electrodes formed on the sam does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor photodiode having the electrodes formed on the sam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor photodiode having the electrodes formed on the sam will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1835170