Semiconductor photodiode device with reduced junction area

Details Semiconductor photodiode device with reduced junction area Semiconductor photodiode device with reduced junction area

1991-05-22

1993-09-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257446, 257461, H01L 2714, H01L 3100

Patent

active

052432157

ABSTRACT:
The present invention discloses a light-receiving element, and method for making same, for a charge storage light sensor having a first semiconductor layer of a first conductive type with an element isolation region disposed thereon. The element isolation regions are formed to produce tilted edges embedded within the first semiconductor layer and to also produce an embedded region of a second conductive type. The embedded region is effective to collect the photoelectric current resulting from light exposure to the first semiconductor layer regions upon the application of a reverse bias potential to the embedded region.

REFERENCES:
patent: 4450464 (1984-05-01), Yamada
patent: 4910568 (1990-03-01), Takei et al.
Jacobus, "Photodiode Arrays", IBM Technical Disclosure Bulletin, vol. 13, No. 8, Jan. 1971.

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