Semiconductor photodiode device with isolation region

Details Semiconductor photodiode device with isolation region Semiconductor photodiode device with isolation region

1993-11-17

1994-11-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257458, 257461, 257465, 257519, 257548, H01L 2714

Patent

active

053609875

ABSTRACT:
A dielectrically isolated photodiode having an increased p-n junction size with improved photo-carrier collection efficiency. The photodiode comprises a first layer of semiconductor material formed on the bottom and the walls of an isolation region; a second layer of semiconductor material formed on the first layer. The second layer forming a first p-n junction with the first layer and having opposite conductivity type compared to that of the first layer. The photodiode also comprises a third layer of semiconductor material formed on the second layer and electrically coupled to the first layer. The third layer having the same conductivity type as the first layer and forming a second p-n junction with the second layer. During operation, the first p-n junction functions to collect photo-generated carriers that extend to the bottom and walls of the isolation region, thereby increasing the active collecting p-n junction area per isolation region area to improve efficiency of the photodiode.

REFERENCES:
patent: 4961097 (1990-10-01), Pirastehfar et al.
patent: 5239193 (1993-08-01), Benton et al.
"High Voltage Solid State Relays for Telecommunications", J. C. Gammel, Electro, Session 24, pp. 1-4 (1986).

Affiliated with

Also associated with

Rating

Semiconductor photodiode device with isolation region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor photodiode device with isolation region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor photodiode device with isolation region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1804120