Semiconductor photodiode and a method for fabricating the same

Details Semiconductor photodiode and a method for fabricating the same Semiconductor photodiode and a method for fabricating the same

1998-02-06

2000-06-27

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438563, H01L 3118

Patent

active

060806001

ABSTRACT:
It is the object of the invention to suppress the leakage current of a semiconductor photodiode. A trench, a side wall of which is covered with and insulating layer, is formed on the surface of a semiconductor substrate of the first conductivity type. Then, an epitaxial layer of the second conductivity type is grown in the trench, where a PN-junction is constructed between the bottom surface of the epitaxial layer and the semiconductor substrate. An impurity diffusion layer of the second conductivity type with higher impurity concentration than that of an internal portion of the epitaxial semiconductor layer is formed over the side surface of the epitaxial layer of the second conductivity type. In the aforementioned structure, when a reverse bias voltage is applied to the PN-junction, a depletion layer does not extend to a neighborhood of the insulating layer, and a leakage current, which flows via surface states near the insulating layer.

REFERENCES:
patent: 4952990 (1990-08-01), Gruning
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patent: 5177581 (1993-01-01), Kubo et al.
patent: 5236863 (1993-08-01), Iranmanesh
patent: 5250461 (1993-10-01), Sparks
patent: 5360987 (1994-11-01), Shibib
patent: 5747860 (1998-05-01), Sugiyama et al.

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